Toshiba Semiconductor and Storage
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TK65S04N1L,LQ
Lihat Info Lembar Data

TK65S04N1L,LQ

MOSFET N-CH 40V 65A DPAK
Nomor Bagian
TK65S04N1L,LQ
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
U-MOSVIII-H
Status Bagian
Active
Kemasan
Tape & Reel (TR)
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
175°C (TJ)
Tipe Pemasangan
Surface Mount
Paket / Kasus
TO-252-3, DPak (2 Leads + Tab), SC-63
Paket Perangkat Pemasok
DPAK+
Disipasi Daya (Maks)
107W (Tc)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
40V
Arus - Pengurasan Kontinu (Id) @ 25°C
65A (Ta)
Rds Aktif (Maks) @ Id, Vgs
4.3 mOhm @ 32.5A, 10V
Vgs(th) (Maks) @ Id
2.5V @ 300µA
Biaya Gerbang (Qg) (Maks) @ Vgs
39nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
2550pF @ 10V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±20V
Minta Penawaran
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Persediaan 45029 PCS
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