Toshiba Semiconductor and Storage
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TK65E10N1,S1X
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TK65E10N1,S1X

MOSFET N CH 100V 148A TO220
Nomor Bagian
TK65E10N1,S1X
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
U-MOSVIII-H
Status Bagian
Active
Kemasan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
150°C (TJ)
Tipe Pemasangan
Through Hole
Paket / Kasus
TO-220-3
Paket Perangkat Pemasok
TO-220
Disipasi Daya (Maks)
192W (Tc)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
100V
Arus - Pengurasan Kontinu (Id) @ 25°C
148A (Ta)
Rds Aktif (Maks) @ Id, Vgs
4.8 mOhm @ 32.5A, 10V
Vgs(th) (Maks) @ Id
4V @ 1mA
Biaya Gerbang (Qg) (Maks) @ Vgs
81nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
5400pF @ 50V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±20V
Minta Penawaran
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Persediaan 13427 PCS
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