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NGTD21T65F2WP Trench Field Stop 650V IGBT 650V 45A FS2 Die

NGTD21T65F2WP

Trench Field Stop 650V IGBT 650V 45A FS2 Die
Nomor Bagian
NGTD21T65F2WP
Kategori
Transistor/MOS tube/transistor > IGBT tube/module
Pabrikan/Merek
onsemi (Ansemi)
Enkapsulasi
SMD
Sedang mengemas
bagged
Jumlah paket
1
Keterangan
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
Minta Penawaran
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Persediaan 75699 PCS
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