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NGTD17T65F2WP Trench Field Stop 650V IGBT 600V 40A FS2 Die

NGTD17T65F2WP

Trench Field Stop 650V IGBT 600V 40A FS2 Die
Nomor Bagian
NGTD17T65F2WP
Kategori
Transistor/MOS tube/transistor > IGBT tube/module
Pabrikan/Merek
onsemi (Ansemi)
Enkapsulasi
SMD
Sedang mengemas
bagged
Jumlah paket
1
Keterangan
This Isolated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses.
Minta Penawaran
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Persediaan 56699 PCS
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Kata kunci dari NGTD17T65F2WP
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