Toshiba Semiconductor and Storage
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TPH5900CNH,L1Q
Lembar Data

TPH5900CNH,L1Q

MOSFET N-CH 150V 9A 8SOP
Nomor Bagian
TPH5900CNH,L1Q
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
U-MOSVIII-H
Status Bagian
Active
Kemasan
Digi-Reel®
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
150°C (TJ)
Tipe Pemasangan
Surface Mount
Paket / Kasus
8-PowerVDFN
Paket Perangkat Pemasok
8-SOP Advance (5x5)
Disipasi Daya (Maks)
1.6W (Ta), 42W (Tc)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
150V
Arus - Pengurasan Kontinu (Id) @ 25°C
9A (Ta)
Rds Aktif (Maks) @ Id, Vgs
59 mOhm @ 4.5A, 10V
Vgs(th) (Maks) @ Id
4V @ 200µA
Biaya Gerbang (Qg) (Maks) @ Vgs
7nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
600pF @ 75V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±20V
Minta Penawaran
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Persediaan 20189 PCS
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TPH5900CNH,L1Q MOSFET N-CH 150V 9A 8SOP
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