Toshiba Semiconductor and Storage
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TPC8021-H(TE12LQ,M
Lihat Info Lembar Data

TPC8021-H(TE12LQ,M

MOSFET N-CH 30V 11A SOP8 2-6J1B
Nomor Bagian
TPC8021-H(TE12LQ,M
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
-
Status Bagian
Obsolete
Kemasan
Tape & Reel (TR)
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
150°C (TJ)
Tipe Pemasangan
Surface Mount
Paket / Kasus
8-SOIC (0.173", 4.40mm Width)
Paket Perangkat Pemasok
8-SOP (5.5x6.0)
Disipasi Daya (Maks)
1W (Ta)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
30V
Arus - Pengurasan Kontinu (Id) @ 25°C
11A (Ta)
Rds Aktif (Maks) @ Id, Vgs
17 mOhm @ 5.5A, 10V
Vgs(th) (Maks) @ Id
2.3V @ 1mA
Biaya Gerbang (Qg) (Maks) @ Vgs
11nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
640pF @ 10V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
4.5V, 10V
Vgs (Maks)
±20V
Minta Penawaran
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Persediaan 7965 PCS
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