Toshiba Semiconductor and Storage
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TK31E60X,S1X
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TK31E60X,S1X

MOSFET N-CH 600V 30.8A TO-220
Nomor Bagian
TK31E60X,S1X
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
DTMOSIV-H
Status Bagian
Active
Kemasan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
150°C (TJ)
Tipe Pemasangan
Through Hole
Paket / Kasus
TO-220-3
Paket Perangkat Pemasok
TO-220
Disipasi Daya (Maks)
230W (Tc)
Tipe FET
N-Channel
Fitur FET
Super Junction
Tiriskan ke Sumber Tegangan (Vdss)
600V
Arus - Pengurasan Kontinu (Id) @ 25°C
30.8A (Ta)
Rds Aktif (Maks) @ Id, Vgs
88 mOhm @ 9.4A, 10V
Vgs(th) (Maks) @ Id
3.5V @ 1.5mA
Biaya Gerbang (Qg) (Maks) @ Vgs
65nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
3000pF @ 300V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±30V
Minta Penawaran
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Persediaan 36207 PCS
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