Toshiba Semiconductor and Storage
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TK16N60W,S1VF
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TK16N60W,S1VF

MOSFET N CH 600V 15.8A TO247
Nomor Bagian
TK16N60W,S1VF
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
DTMOSIV
Status Bagian
Active
Kemasan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
150°C (TJ)
Tipe Pemasangan
Through Hole
Paket / Kasus
TO-247-3
Paket Perangkat Pemasok
TO-247
Disipasi Daya (Maks)
130W (Tc)
Tipe FET
N-Channel
Fitur FET
Super Junction
Tiriskan ke Sumber Tegangan (Vdss)
600V
Arus - Pengurasan Kontinu (Id) @ 25°C
15.8A (Ta)
Rds Aktif (Maks) @ Id, Vgs
190 mOhm @ 7.9A, 10V
Vgs(th) (Maks) @ Id
3.7V @ 790µA
Biaya Gerbang (Qg) (Maks) @ Vgs
38nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
1350pF @ 300V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±30V
Minta Penawaran
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Persediaan 38130 PCS
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