Toshiba Semiconductor and Storage
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TK160F10N1L,LQ
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TK160F10N1L,LQ

X35 PB-F POWER MOSFET TRANSISTOR
Nomor Bagian
TK160F10N1L,LQ
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
U-MOSVIII-H
Status Bagian
Active
Kemasan
-
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
175°C
Tipe Pemasangan
Surface Mount
Paket / Kasus
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Paket Perangkat Pemasok
TO-220SM(W)
Disipasi Daya (Maks)
375W (Tc)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
100V
Arus - Pengurasan Kontinu (Id) @ 25°C
160A (Ta)
Rds Aktif (Maks) @ Id, Vgs
2.4 mOhm @ 80A, 10V
Vgs(th) (Maks) @ Id
3.5V @ 1mA
Biaya Gerbang (Qg) (Maks) @ Vgs
122nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
10100pF @ 10V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
6V, 10V
Vgs (Maks)
±20V
Minta Penawaran
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Persediaan 22416 PCS
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