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FQA19N20C
Lihat Info Lembar Data

FQA19N20C

MOSFET N-CH 200V 21.8A TO-3P
Nomor Bagian
FQA19N20C
Pabrikan/Merek
ON Semiconductor
Seri
QFET®
Status Bagian
Obsolete
Kemasan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
-55°C ~ 150°C (TJ)
Tipe Pemasangan
Through Hole
Paket / Kasus
TO-3P-3, SC-65-3
Paket Perangkat Pemasok
TO-3PN
Disipasi Daya (Maks)
180W (Tc)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
200V
Arus - Pengurasan Kontinu (Id) @ 25°C
21.8A (Tc)
Rds Aktif (Maks) @ Id, Vgs
170 mOhm @ 10.9A, 10V
Vgs(th) (Maks) @ Id
4V @ 250µA
Biaya Gerbang (Qg) (Maks) @ Vgs
53nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
1080pF @ 25V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±30V
Minta Penawaran
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Persediaan 37853 PCS
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