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FQA10N80C-F109
Lihat Info Lembar Data

FQA10N80C-F109

MOSFET N-CH 800V 10A TO-3P
Nomor Bagian
FQA10N80C-F109
Pabrikan/Merek
ON Semiconductor
Seri
QFET®
Status Bagian
Active
Kemasan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
-55°C ~ 150°C (TJ)
Tipe Pemasangan
Through Hole
Paket / Kasus
TO-3P-3, SC-65-3
Paket Perangkat Pemasok
TO-3P
Disipasi Daya (Maks)
240W (Tc)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
800V
Arus - Pengurasan Kontinu (Id) @ 25°C
10A (Tc)
Rds Aktif (Maks) @ Id, Vgs
1.1 Ohm @ 5A, 10V
Vgs(th) (Maks) @ Id
5V @ 250µA
Biaya Gerbang (Qg) (Maks) @ Vgs
58nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
2800pF @ 25V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±30V
Minta Penawaran
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Persediaan 22169 PCS
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FQA10N80C-F109 Tabel data
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