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SBRS8190T3G
100V 2A 750mV@1mA Schottky diodePower rectifier, 1.0 A, 90 V
Nomor Bagian
SBRS8190T3G
Kategori
diode > Schottky diode
Pabrikan/Merek
onsemi (Ansemi)
Enkapsulasi
SMB (DO-214AA)
Sedang mengemas
taping
Jumlah paket
2500
Keterangan
The Schottky diode adopts the Schottky diode potential barrier principle in the large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.
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Persediaan 58469 PCS
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100V 2A 750mV@1mA 1.0 A, 100 V, Schottky Power Rectifier, Surface Mount
onsemi (Ansemi)
100V 2A 750mV@1mA 1.0 A, 100 V, Schottky Power Rectifier, Surface Mount
onsemi (Ansemi)
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