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NCV5106ADR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCV5106ADR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Nomor Bagian
NCV5106ADR2G
Kategori
Power Chip > Gate Driver IC
Pabrikan/Merek
onsemi (Ansemi)
Enkapsulasi
SOIC-8
Sedang mengemas
taping
Jumlah paket
2500
Keterangan
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
Minta Penawaran
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Persediaan 93007 PCS
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Kata kunci dari NCV5106ADR2G
NCV5106ADR2G Komponen elektronik
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NCV5106ADR2G Distributor
NCV5106ADR2G Tabel data
NCV5106ADR2G Foto
NCV5106ADR2G Harga
NCV5106ADR2G Menawarkan
NCV5106ADR2G Harga terendah
NCV5106ADR2G Mencari
NCV5106ADR2G Pembelian
NCV5106ADR2G Kepingan