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FFSH20120ADN-F085
1.2kV 15A 1.45V@10A SiC, dual die, 1200 V, 20 A
Nomor Bagian
FFSH20120ADN-F085
Kategori
diode > Schottky diode
Pabrikan/Merek
onsemi (Ansemi)
Enkapsulasi
TO-247-3
Sedang mengemas
Tube
Jumlah paket
450
Keterangan
Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
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Persediaan 90784 PCS
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