Lihat spesifikasi untuk detail produk.
SIHFR1N60A-GE3
Product Overview
Category
The SIHFR1N60A-GE3 belongs to the category of power MOSFETs.
Use
It is used as a high-voltage, fast-switching N-channel enhancement mode power field-effect transistor.
Characteristics
- High voltage capability
- Low gate charge
- Fast switching speed
- Low on-resistance
Package
The SIHFR1N60A-GE3 is typically available in a TO-220 Full-Pak package.
Essence
This product is essential for power management and control applications where high efficiency and reliability are crucial.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Voltage Rating: 600V
- Continuous Drain Current: 1.3A
- RDS(ON): 4.5Ω
- Gate Threshold Voltage: 2.0V
- Total Gate Charge: 6.5nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SIHFR1N60A-GE3 typically has three pins: 1. Source (S) 2. Drain (D) 3. Gate (G)
Functional Features
- High voltage capability allows for use in various power applications.
- Low gate charge enables fast switching, reducing power losses.
- Low on-resistance minimizes conduction losses, improving efficiency.
Advantages
- Suitable for high-voltage applications
- Fast switching speed
- Low power dissipation
Disadvantages
- Limited continuous drain current compared to some alternative models
- Higher on-resistance compared to certain alternatives
Working Principles
The SIHFR1N60A-GE3 operates based on the principles of field-effect transistors, utilizing the electric field at the gate to control the flow of current between the source and drain terminals.
Detailed Application Field Plans
This power MOSFET is commonly used in: - Switching power supplies - Motor control - Inverters - LED lighting - DC-DC converters
Detailed and Complete Alternative Models
Some alternative models to the SIHFR1N60A-GE3 include: - IRF840 - STP16NF06 - FQP30N06L
In conclusion, the SIHFR1N60A-GE3 power MOSFET offers high-voltage capability, fast switching speed, and low on-resistance, making it suitable for various power management and control applications.
[Word count: 366]
Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SIHFR1N60A-GE3 dalam solusi teknis
Sure, here are 10 common questions and answers related to the application of SIHFR1N60A-GE3 in technical solutions:
What is SIHFR1N60A-GE3?
- SIHFR1N60A-GE3 is a power MOSFET designed for high-speed switching applications.
What are the key features of SIHFR1N60A-GE3?
- The key features include low on-resistance, fast switching speed, and high ruggedness.
What are the typical applications of SIHFR1N60A-GE3?
- Typical applications include power supplies, motor control, lighting, and inverters.
What is the maximum drain-source voltage rating of SIHFR1N60A-GE3?
- The maximum drain-source voltage rating is 600V.
What is the maximum continuous drain current of SIHFR1N60A-GE3?
- The maximum continuous drain current is 1A.
Does SIHFR1N60A-GE3 require a heat sink for operation?
- It depends on the specific application and power dissipation requirements. In some cases, a heat sink may be necessary.
Is SIHFR1N60A-GE3 suitable for high-frequency switching applications?
- Yes, SIHFR1N60A-GE3 is designed for high-speed switching applications.
What is the operating temperature range of SIHFR1N60A-GE3?
- The operating temperature range is typically -55°C to 150°C.
Can SIHFR1N60A-GE3 be used in automotive applications?
- Yes, SIHFR1N60A-GE3 is suitable for automotive applications, subject to compliance with relevant automotive standards.
Are there any recommended driver ICs or gate drivers for SIHFR1N60A-GE3?
- Various manufacturers offer compatible driver ICs and gate drivers that can be used with SIHFR1N60A-GE3, such as Infineon, Texas Instruments, and STMicroelectronics.
I hope these questions and answers are helpful for your technical solutions involving SIHFR1N60A-GE3! If you have any more specific questions, feel free to ask.