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SIHD9N60E-GE3
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SIHD9N60E-GE3

Introduction

The SIHD9N60E-GE3 is a power MOSFET belonging to the category of electronic components. It is commonly used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Electronic Components
  • Use: Power switching and amplification in electronic circuits
  • Characteristics: High voltage tolerance, low on-state resistance, fast switching speed
  • Package: TO-252-3 (DPAK)
  • Essence: Power MOSFET for efficient power management
  • Packaging/Quantity: Typically packaged in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 600V
  • Current Rating: 9A
  • On-State Resistance: 0.8Ω
  • Gate Threshold Voltage: 2.5V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHD9N60E-GE3 features a standard TO-252-3 (DPAK) package with three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Connection to the load or power supply 3. Source (S): Common reference point for the MOSFET

Functional Features

  • High voltage tolerance allows for use in various power applications
  • Low on-state resistance minimizes power loss and heat generation
  • Fast switching speed enables efficient power management

Advantages and Disadvantages

Advantages

  • Efficient power switching and amplification
  • Low power dissipation
  • Compact package size

Disadvantages

  • Sensitivity to static electricity
  • Limited maximum current and voltage ratings

Working Principles

The SIHD9N60E-GE3 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SIHD9N60E-GE3 finds extensive use in the following application fields: - Switching power supplies - Motor control systems - LED lighting drivers - Audio amplifiers - Inverter circuits

Detailed and Complete Alternative Models

  • SIHD9N60E-GE3R: Variant with improved thermal performance
  • SIHD9N60E-GE4: Higher voltage rating (900V) version
  • SIHD9N60E-GE2: Lower on-state resistance (0.6Ω) variant

In conclusion, the SIHD9N60E-GE3 power MOSFET offers efficient power management capabilities and is widely utilized in diverse electronic applications.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SIHD9N60E-GE3 dalam solusi teknis

  1. What is the maximum drain-source voltage of SIHD9N60E-GE3?

    • The maximum drain-source voltage of SIHD9N60E-GE3 is 600V.

  2. What is the continuous drain current rating of SIHD9N60E-GE3?

    • The continuous drain current rating of SIHD9N60E-GE3 is 9A.

  3. What is the on-state resistance (RDS(on)) of SIHD9N60E-GE3?

    • The on-state resistance (RDS(on)) of SIHD9N60E-GE3 is typically 1.5 ohms.

  4. What is the gate threshold voltage of SIHD9N60E-GE3?

    • The gate threshold voltage of SIHD9N60E-GE3 is typically 2.5V.

  5. Is SIHD9N60E-GE3 suitable for high-frequency switching applications?

    • Yes, SIHD9N60E-GE3 is designed for high-frequency switching applications.

  6. What is the operating temperature range of SIHD9N60E-GE3?

    • The operating temperature range of SIHD9N60E-GE3 is -55°C to 150°C.

  7. Does SIHD9N60E-GE3 have built-in protection features?

    • Yes, SIHD9N60E-GE3 has built-in overcurrent and thermal protection features.

  8. Can SIHD9N60E-GE3 be used in automotive applications?

    • Yes, SIHD9N60E-GE3 is suitable for automotive applications.

  9. What is the package type of SIHD9N60E-GE3?

    • SIHD9N60E-GE3 is available in a TO-252 (DPAK) package.

  10. Are there any application notes or reference designs available for using SIHD9N60E-GE3 in power supply circuits?

    • Yes, application notes and reference designs are available for using SIHD9N60E-GE3 in power supply circuits.