Beli Toshiba Semiconductor and Storage TPH2R506PL,L1Q X35 PB-F POWER MOSFET TRANSISTOR - YYIC

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TPH2R506PL,L1Q

Lembar Data

TPH2R506PL,L1Q

X35 PB-F POWER MOSFET TRANSISTOR

Nomor Bagian

TPH2R506PL,L1Q

Pabrikan/Merek

Toshiba Semiconductor and Storage

Seri

U-MOSIX-H

Status Bagian

Active

Kemasan

Digi-Reel®

Teknologi

MOSFET (Metal Oxide)

Suhu Operasional

175°C (TJ)

Tipe Pemasangan

Surface Mount

Paket / Kasus

8-PowerVDFN

Paket Perangkat Pemasok

8-SOP Advance (5x5)

Disipasi Daya (Maks)

132W (Tc)

Tipe FET

N-Channel

Fitur FET

-

Tiriskan ke Sumber Tegangan (Vdss)

60V

Arus - Pengurasan Kontinu (Id) @ 25°C

100A (Tc)

Rds Aktif (Maks) @ Id, Vgs

4.4 mOhm @ 30A, 4.5V

Vgs(th) (Maks) @ Id

2.5V @ 500µA

Biaya Gerbang (Qg) (Maks) @ Vgs

60nC @ 10V

Kapasitansi Masukan (Ciss) (Maks) @ Vds

5435pF @ 30V

Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)

4.5V, 10V

Vgs (Maks)

±20V

Minta Penawaran

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Persediaan 38775 PCS

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