Toshiba Semiconductor and Storage
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TK10J80E,S1E
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TK10J80E,S1E

MOSFET N-CH 800V TO-3PN
Nomor Bagian
TK10J80E,S1E
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
π-MOSVIII
Status Bagian
Active
Kemasan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
150°C (TJ)
Tipe Pemasangan
Through Hole
Paket / Kasus
TO-3P-3, SC-65-3
Paket Perangkat Pemasok
TO-3P(N)
Disipasi Daya (Maks)
250W (Tc)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
800V
Arus - Pengurasan Kontinu (Id) @ 25°C
10A (Ta)
Rds Aktif (Maks) @ Id, Vgs
1 Ohm @ 5A, 10V
Vgs(th) (Maks) @ Id
4V @ 1mA
Biaya Gerbang (Qg) (Maks) @ Vgs
46nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
2000pF @ 25V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±30V
Minta Penawaran
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Persediaan 48328 PCS
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Kata kunci dari TK10J80E,S1E
TK10J80E,S1E Komponen elektronik
TK10J80E,S1E Penjualan
TK10J80E,S1E Pemasok
TK10J80E,S1E Distributor
TK10J80E,S1E Tabel data
TK10J80E,S1E Foto
TK10J80E,S1E Harga
TK10J80E,S1E Menawarkan
TK10J80E,S1E Harga terendah
TK10J80E,S1E Mencari
TK10J80E,S1E Pembelian
TK10J80E,S1E Kepingan