Toshiba Semiconductor and Storage
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TK10A80W,S4X
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TK10A80W,S4X

MOSFET N-CH 800V 9.5A TO220SIS
Nomor Bagian
TK10A80W,S4X
Pabrikan/Merek
Toshiba Semiconductor and Storage
Seri
DTMOSIV
Status Bagian
Active
Kemasan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasional
150°C
Tipe Pemasangan
Through Hole
Paket / Kasus
TO-220-3 Full Pack
Paket Perangkat Pemasok
TO-220SIS
Disipasi Daya (Maks)
40W (Tc)
Tipe FET
N-Channel
Fitur FET
-
Tiriskan ke Sumber Tegangan (Vdss)
800V
Arus - Pengurasan Kontinu (Id) @ 25°C
9.5A (Ta)
Rds Aktif (Maks) @ Id, Vgs
550 mOhm @ 4.8A, 10V
Vgs(th) (Maks) @ Id
4V @ 450µA
Biaya Gerbang (Qg) (Maks) @ Vgs
19nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
1150pF @ 300V
Tegangan Penggerak (Max Rds Aktif, Min Rds Aktif)
10V
Vgs (Maks)
±20V
Minta Penawaran
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Persediaan 15994 PCS
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