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NVMFD5873NLT1G
Lembar Data

NVMFD5873NLT1G

MOSFET 2N-CH 60V 10A SO8FL
Nomor Bagian
NVMFD5873NLT1G
Pabrikan/Merek
ON Semiconductor
Seri
-
Status Bagian
Active
Kemasan
Cut Tape (CT)
Suhu Operasional
-55°C ~ 175°C (TJ)
Tipe Pemasangan
Surface Mount
Paket / Kasus
8-PowerTDFN
Kekuatan - Maks
3.1W
Paket Perangkat Pemasok
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Tipe FET
2 N-Channel (Dual)
Fitur FET
Logic Level Gate
Tiriskan ke Sumber Tegangan (Vdss)
60V
Arus - Pengurasan Kontinu (Id) @ 25°C
10A
Rds Aktif (Maks) @ Id, Vgs
13 mOhm @ 15A, 10V
Vgs(th) (Maks) @ Id
2.5V @ 250µA
Biaya Gerbang (Qg) (Maks) @ Vgs
30.5nC @ 10V
Kapasitansi Masukan (Ciss) (Maks) @ Vds
1560pF @ 25V
Minta Penawaran
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Persediaan 26732 PCS
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Kata kunci dari NVMFD5873NLT1G
NVMFD5873NLT1G Komponen elektronik
NVMFD5873NLT1G Penjualan
NVMFD5873NLT1G Pemasok
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NVMFD5873NLT1G Tabel data
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NVMFD5873NLT1G Menawarkan
NVMFD5873NLT1G Harga terendah
NVMFD5873NLT1G Mencari
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