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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Nomor Bagian
NCP5106BDR2G
Kategori
Power Chip > Gate Driver IC
Pabrikan/Merek
onsemi (Ansemi)
Enkapsulasi
SOIC-8-150mil
Sedang mengemas
taping
Jumlah paket
2500
Keterangan
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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Persediaan 75348 PCS
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Kata kunci dari NCP5106BDR2G
NCP5106BDR2G Komponen elektronik
NCP5106BDR2G Penjualan
NCP5106BDR2G Pemasok
NCP5106BDR2G Distributor
NCP5106BDR2G Tabel data
NCP5106BDR2G Foto
NCP5106BDR2G Harga
NCP5106BDR2G Menawarkan
NCP5106BDR2G Harga terendah
NCP5106BDR2G Mencari
NCP5106BDR2G Pembelian
NCP5106BDR2G Kepingan