Diode/Bridge Rectifier

Nomor Bagian
Taiwan Semiconductor
Pabrikan
Keterangan
86330 PCS
Persediaan
Nomor Bagian
Taiwan Semiconductor
Pabrikan
Keterangan
68471 PCS
Persediaan
Nomor Bagian
onsemi (Ansemi)
Pabrikan
Keterangan
67862 PCS
Persediaan
Nomor Bagian
Littelfuse (American Littelfuse)
Pabrikan
Keterangan
59192 PCS
Persediaan
Nomor Bagian
Nexperia
Pabrikan
Keterangan
51537 PCS
Persediaan
Nomor Bagian
onsemi (Ansemi)
Pabrikan
Rectifier Die Used as IGBT Reverse Diode
Keterangan
80069 PCS
Persediaan
Nomor Bagian
onsemi (Ansemi)
Pabrikan
Keterangan
84172 PCS
Persediaan
Nomor Bagian
ROHM (Rohm)
Pabrikan
Keterangan
99135 PCS
Persediaan
Nomor Bagian
IXYS
Pabrikan
Keterangan
73488 PCS
Persediaan
MACOM
Pabrikan
Keterangan
54754 PCS
Persediaan
Nomor Bagian
onsemi (Ansemi)
Pabrikan
Keterangan
83714 PCS
Persediaan
Nomor Bagian
DIOTEC (Diotec)
Pabrikan
Keterangan
75163 PCS
Persediaan
Nomor Bagian
Comchip
Pabrikan
Keterangan
99017 PCS
Persediaan
Nomor Bagian
DIOTEC (Diotec)
Pabrikan
Keterangan
61669 PCS
Persediaan
Nomor Bagian
Infineon (Infineon)
Pabrikan
Keterangan
82468 PCS
Persediaan
MICROCHIP (US Microchip)
Pabrikan
Keterangan
57099 PCS
Persediaan
Nomor Bagian
Nexperia
Pabrikan
Keterangan
94157 PCS
Persediaan
Nomor Bagian
Nexperia
Pabrikan
Keterangan
60719 PCS
Persediaan
Nomor Bagian
onsemi (Ansemi)
Pabrikan
Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Keterangan
78460 PCS
Persediaan
Nomor Bagian
onsemi (Ansemi)
Pabrikan
Keterangan
97991 PCS
Persediaan