SUM110N03-04P-E3

Introduction

The SUM110N03-04P-E3 is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The SUM110N03-04P-E3 is commonly used in power management applications, such as voltage regulation and switching circuits.
• Characteristics: It exhibits low on-state resistance, high switching speed, and efficient power dissipation.
• Package: The MOSFET is typically packaged in a TO-220 package, providing thermal and electrical isolation.
• Essence: Its essence lies in providing reliable and efficient power control in various electronic systems.
• Packaging/Quantity: The MOSFET is usually available in reels or tubes, with quantities varying based on supplier and customer requirements.

Specifications

• Voltage Rating: 30V
• Current Rating: 110A
• On-State Resistance: 4mΩ
• Gate Threshold Voltage: 2V
• Power Dissipation: 200W
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SUM110N03-04P-E3 typically has three pins: 1. Gate (G): Input for controlling the MOSFET's conductivity. 2. Drain (D): Connects to the load and serves as the output terminal. 3. Source (S): Connected to the ground reference and input supply return.

Functional Features

• High Efficiency: The MOSFET offers low on-state resistance, minimizing power losses during operation.
• Fast Switching Speed: Enables rapid response in switching applications, contributing to overall system performance.
• Enhanced Thermal Performance: The TO-220 package facilitates effective heat dissipation, ensuring reliable operation under high power conditions.

Advantages and Disadvantages

Advantages

• Low on-state resistance enhances power efficiency.
• Fast switching speed improves system responsiveness.
• TO-220 package provides robust thermal management.

Disadvantages

• Higher cost compared to standard bipolar junction transistors.
• Sensitivity to static electricity and overvoltage conditions.

Working Principles

The SUM110N03-04P-E3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET conducts, allowing power to flow through the load.

Detailed Application Field Plans

The MOSFET finds extensive use in various applications, including: - Switching Power Supplies: Utilized for efficient power conversion and regulation. - Motor Control: Enabling precise and responsive motor driving circuits. - Electronic Load Switching: Providing controlled power switching in electronic systems.

Detailed and Complete Alternative Models

• IRF3205: A comparable power MOSFET with similar specifications and characteristics.
• STP55NF06L: Offers an alternative option with equivalent performance parameters.

In conclusion, the SUM110N03-04P-E3 power MOSFET serves as a crucial component in power management and control applications, offering high efficiency, fast switching speed, and reliable performance. Its specifications, functional features, and application versatility make it a valuable choice for various electronic systems.

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