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SQD50P08-28_GE3
Product Overview
Category
The SQD50P08-28_GE3 belongs to the category of power MOSFETs.
Use
It is used as a switching device in various electronic circuits and applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SQD50P08-28_GE3 is typically available in a TO-252 package.
Essence
This power MOSFET is essential for controlling high-power loads in electronic systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 80V
- Continuous Drain Current (ID): 50A
- On-Resistance (RDS(on)): 28mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 40nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The SQD50P08-28_GE3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power losses and improves efficiency.
- Fast switching speed enables rapid control of power flow.
Advantages
- Suitable for high-power applications
- Low power dissipation
- Enhanced system efficiency
Disadvantages
- Sensitivity to static electricity
- Requires careful handling during assembly
Working Principles
The SQD50P08-28_GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SQD50P08-28_GE3 is widely used in: - Power supplies - Motor control - Inverters - DC-DC converters - Automotive electronics
Detailed and Complete Alternative Models
Some alternative models to the SQD50P08-28_GE3 include: - IRF4905 - FDP8878 - AOD4184
In conclusion, the SQD50P08-28_GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power control applications, making it an essential component in modern electronic systems.
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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SQD50P08-28_GE3 dalam solusi teknis
What is the maximum drain-source voltage of SQD50P08-28_GE3?
- The maximum drain-source voltage of SQD50P08-28_GE3 is 80V.
What is the continuous drain current of SQD50P08-28_GE3?
- The continuous drain current of SQD50P08-28_GE3 is 50A.
What is the on-resistance of SQD50P08-28_GE3?
- The on-resistance of SQD50P08-28_GE3 is typically 28mΩ.
What is the gate threshold voltage of SQD50P08-28_GE3?
- The gate threshold voltage of SQD50P08-28_GE3 is typically 2V.
What are the typical applications for SQD50P08-28_GE3?
- Typical applications for SQD50P08-28_GE3 include power management in automotive, industrial, and consumer electronics.
Is SQD50P08-28_GE3 suitable for high-frequency switching applications?
- Yes, SQD50P08-28_GE3 is suitable for high-frequency switching applications due to its low on-resistance.
What is the operating temperature range of SQD50P08-28_GE3?
- The operating temperature range of SQD50P08-28_GE3 is typically -55°C to 175°C.
Does SQD50P08-28_GE3 have built-in protection features?
- SQD50P08-28_GE3 may have built-in protection features such as overcurrent protection and thermal shutdown.
Can SQD50P08-28_GE3 be used in parallel to increase current handling capability?
- Yes, SQD50P08-28_GE3 can be used in parallel to increase current handling capability in certain applications.
What are the key advantages of using SQD50P08-28_GE3 in technical solutions?
- The key advantages of using SQD50P08-28_GE3 include high current handling capability, low on-resistance, and suitability for various power management applications.