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SIRA14DP-T1-GE3
Product Category:
The SIRA14DP-T1-GE3 belongs to the category of semiconductor devices, specifically a dual P-channel MOSFET.
Basic Information Overview: - Category: Semiconductor device - Use: Power management and switching applications - Characteristics: Dual P-channel MOSFET, low on-resistance, high current capability - Package: DFN (Dual Flat No-Lead) package - Essence: Efficient power management and switching - Packaging/Quantity: Typically available in reels of 3000 units
Specifications: - Voltage Rating: -20V - Continuous Drain Current: -4A - On-Resistance: 60mΩ - Power Dissipation: 1.25W - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1: Source (1st MOSFET) - Pin 2: Gate (1st MOSFET) - Pin 3: Drain (1st MOSFET) - Pin 4: Source (2nd MOSFET) - Pin 5: Gate (2nd MOSFET) - Pin 6: Drain (2nd MOSFET)
Functional Features: - Dual P-channel MOSFET configuration - Low on-resistance for minimal power loss - High current capability for efficient power management
Advantages: - Compact DFN package for space-saving designs - Low on-resistance enhances efficiency - Suitable for power management and switching applications
Disadvantages: - Limited voltage rating (-20V) - May not be suitable for high-voltage applications
Working Principles: The SIRA14DP-T1-GE3 operates based on the principles of P-channel MOSFETs, utilizing their characteristics to efficiently manage and switch power in electronic circuits. When appropriate gate voltages are applied, the MOSFETs allow or restrict the flow of current, enabling effective power control.
Detailed Application Field Plans: - Power supply units - Battery management systems - Motor control circuits - LED lighting applications - Portable electronic devices
Detailed and Complete Alternative Models: - SIRA12DP-T1-GE3 - SIRA16DP-T1-GE3 - SIRA14EP-T1-GE3
This comprehensive entry provides an in-depth understanding of the SIRA14DP-T1-GE3, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SIRA14DP-T1-GE3 dalam solusi teknis
What is the maximum operating temperature of SIRA14DP-T1-GE3?
- The maximum operating temperature of SIRA14DP-T1-GE3 is typically 150°C.
What is the typical forward voltage drop of SIRA14DP-T1-GE3?
- The typical forward voltage drop of SIRA14DP-T1-GE3 is around 0.35V at a forward current of 10A.
What are the recommended applications for SIRA14DP-T1-GE3?
- SIRA14DP-T1-GE3 is commonly used in automotive, industrial, and consumer electronics applications such as LED lighting, motor control, and power supplies.
What is the reverse recovery time of SIRA14DP-T1-GE3?
- The reverse recovery time of SIRA14DP-T1-GE3 is typically 35ns.
What is the maximum continuous forward current rating of SIRA14DP-T1-GE3?
- The maximum continuous forward current rating of SIRA14DP-T1-GE3 is 14A.
Does SIRA14DP-T1-GE3 have a low leakage current?
- Yes, SIRA14DP-T1-GE3 has a low reverse leakage current, making it suitable for high-efficiency applications.
Is SIRA14DP-T1-GE3 RoHS compliant?
- Yes, SIRA14DP-T1-GE3 is RoHS compliant, meeting environmental standards.
What is the package type of SIRA14DP-T1-GE3?
- SIRA14DP-T1-GE3 comes in a DPAK (TO-252) package, which is suitable for surface mount applications.
Can SIRA14DP-T1-GE3 be used in high-frequency switching applications?
- Yes, SIRA14DP-T1-GE3 is designed for high-speed switching and can be used in high-frequency applications.
What are the key advantages of using SIRA14DP-T1-GE3 in technical solutions?
- The key advantages of SIRA14DP-T1-GE3 include its low forward voltage drop, fast switching speed, and high current capability, making it ideal for efficient and reliable power management in various technical solutions.