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SIHP6N40D-GE3

SIHP6N40D-GE3

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-power systems
Characteristics: High efficiency, low on-resistance, fast switching speed
Package: DPAK (TO-252)
Essence: Silicon power MOSFET
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 40V
  • Current Rating: 6A
  • On-Resistance: 60mΩ
  • Gate Threshold Voltage: 2V
  • Power Dissipation: 2.5W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance for reliability

Advantages

  • High efficiency
  • Compact DPAK package
  • Wide operating temperature range

Disadvantages

  • Limited voltage and current ratings compared to higher-power MOSFETs
  • Not suitable for extremely high-power applications

Working Principles

The SIHP6N40D-GE3 operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a sufficient gate voltage is applied, the MOSFET allows current to flow, and when the gate voltage is removed, the current flow ceases.

Detailed Application Field Plans

This MOSFET is suitable for use in various applications including: - Power supplies - Motor control - DC-DC converters - Inverters

Detailed and Complete Alternative Models

  1. SIHP6N40D-E3
  2. SIHP6N40D-GE3-ND

Note: The above alternative models are similar but may have different packaging or quantity options.

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