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SIHP22N65E-GE3
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SIHP22N65E-GE3

Product Overview

Category

The SIHP22N65E-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIHP22N65E-GE3 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 650V
  • Continuous Drain Current (ID): 22A
  • On-Resistance (RDS(on)): 0.19Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 40nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHP22N65E-GE3 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for demanding applications.
  • Low on-resistance for reduced power dissipation.
  • Fast switching speed for precise power control.

Disadvantages

  • May require additional circuitry for optimal performance in some applications.
  • Sensitivity to static discharge requires careful handling during assembly.

Working Principles

The SIHP22N65E-GE3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

Power Supply Applications

The MOSFET can be used in switch-mode power supplies for efficient voltage regulation and power conversion.

Motor Control

Its fast switching speed makes it suitable for motor drive circuits, enabling precise control of motor speed and direction.

High-Power Switching Applications

In high-power systems such as inverters and industrial equipment, the MOSFET facilitates efficient power switching and control.

Detailed and Complete Alternative Models

  • IRFP460: Similar high-voltage MOSFET with comparable specifications.
  • STP16NF06: Alternative MOSFET with lower voltage capability but suitable for lower-power applications.

In conclusion, the SIHP22N65E-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an essential component for power management and control in various electronic systems.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SIHP22N65E-GE3 dalam solusi teknis

  1. What is the maximum drain-source voltage rating of SIHP22N65E-GE3?

    • The maximum drain-source voltage rating of SIHP22N65E-GE3 is 650V.

  2. What is the continuous drain current rating of SIHP22N65E-GE3?

    • The continuous drain current rating of SIHP22N65E-GE3 is 22A.

  3. What is the on-resistance of SIHP22N65E-GE3?

    • The on-resistance of SIHP22N65E-GE3 is typically 0.16 ohms.

  4. What is the gate threshold voltage of SIHP22N65E-GE3?

    • The gate threshold voltage of SIHP22N65E-GE3 is typically 2.5V.

  5. What are the typical applications for SIHP22N65E-GE3?

    • SIHP22N65E-GE3 is commonly used in applications such as power supplies, motor control, and lighting ballasts.

  6. What is the maximum junction temperature of SIHP22N65E-GE3?

    • The maximum junction temperature of SIHP22N65E-GE3 is 175°C.

  7. Does SIHP22N65E-GE3 require a heat sink for operation?

    • It is recommended to use a heat sink for optimal thermal performance, especially in high-power applications.

  8. What is the input capacitance of SIHP22N65E-GE3?

    • The input capacitance of SIHP22N65E-GE3 is typically 3200pF.

  9. Is SIHP22N65E-GE3 suitable for high-frequency switching applications?

    • Yes, SIHP22N65E-GE3 is designed for high-frequency switching due to its low on-resistance and fast switching characteristics.

  10. What are the key advantages of using SIHP22N65E-GE3 in technical solutions?

    • Some key advantages include low on-resistance, high voltage rating, and suitability for various power electronics applications.