SIHP16N50C-E3

Product Overview

Category

The SIHP16N50C-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SIHP16N50C-E3 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 500V
• Continuous Drain Current (ID): 16A
• On-Resistance (RDS(on)): 0.45Ω
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 25nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHP16N50C-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power dissipation
• High voltage capability for robust performance
• Fast switching speed for efficient operation
• Low gate charge for reduced drive requirements

Advantages

• High voltage capability makes it suitable for diverse applications
• Low on-resistance enhances efficiency and reduces heat generation
• Fast switching speed allows for rapid response in switching applications

Disadvantages

• Higher gate capacitance compared to some alternative models
• May require careful consideration of gate drive circuitry due to higher gate charge

Working Principles

The SIHP16N50C-E3 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

1. Power Supply Systems: Utilized in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Employed in motor drive circuits for controlling the speed and direction of motors.
3. High-Power Switching: Used in applications requiring high-current switching such as inverter systems and industrial equipment.

Detailed and Complete Alternative Models

1. IRFP460: Similar high-voltage MOSFET with comparable characteristics.
2. STP16NF06: Alternative MOSFET with lower on-resistance and gate charge.
3. IXFN38N100: High-voltage MOSFET with enhanced switching speed and low on-resistance.

In conclusion, the SIHP16N50C-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management and control applications. While it has certain advantages, such as robust performance and efficiency, careful consideration of its characteristics and alternatives is essential for optimal design and application.

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