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SIHP12N60E-GE3

SIHP12N60E-GE3

Product Category

The SIHP12N60E-GE3 belongs to the category of power MOSFETs.

Basic Information Overview

  • Use: The SIHP12N60E-GE3 is used as a power switch in various electronic applications, including power supplies, motor control, and lighting.
  • Characteristics: It features low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
  • Package: The SIHP12N60E-GE3 is typically available in a TO-220AB package.
  • Essence: Its essence lies in providing efficient power switching capabilities in electronic circuits.
  • Packaging/Quantity: It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 12A
  • On-State Resistance: 0.45Ω
  • Gate Charge: 16nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHP12N60E-GE3 typically has three pins: 1. Gate (G): Input pin for controlling the switching operation. 2. Drain (D): Output pin connected to the load. 3. Source (S): Ground reference for the MOSFET.

Functional Features

  • High voltage capability
  • Fast switching speed
  • Low gate drive power loss

Advantages

  • Efficient power conversion
  • Reduced power dissipation
  • Enhanced system reliability

Disadvantages

  • Sensitivity to overvoltage conditions
  • Potential for thermal runaway if not properly managed

Working Principles

The SIHP12N60E-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage exceeds the threshold, the MOSFET turns on, allowing current to flow through.

Detailed Application Field Plans

The SIHP12N60E-GE3 finds extensive use in: - Switched-mode power supplies - Motor drives - Lighting systems - Renewable energy systems

Detailed and Complete Alternative Models

  1. IRFP460: Similar voltage and current ratings
  2. STP12NM50FD: Comparable performance characteristics
  3. IXFN12N100Q2: Alternative with higher voltage rating

In conclusion, the SIHP12N60E-GE3 power MOSFET offers efficient power switching capabilities with specific advantages and disadvantages. Its application spans across various electronic systems, and there are alternative models available for different design requirements.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SIHP12N60E-GE3 dalam solusi teknis

  1. What is the maximum voltage rating of SIHP12N60E-GE3?

    • The maximum voltage rating of SIHP12N60E-GE3 is 600V.
  2. What is the maximum current rating of SIHP12N60E-GE3?

    • The maximum current rating of SIHP12N60E-GE3 is 12A.
  3. What type of package does SIHP12N60E-GE3 come in?

    • SIHP12N60E-GE3 comes in a TO-220 Full-Pak package.
  4. What are the typical applications for SIHP12N60E-GE3?

    • SIHP12N60E-GE3 is commonly used in power supplies, motor drives, and lighting applications.
  5. Does SIHP12N60E-GE3 have built-in protection features?

    • Yes, SIHP12N60E-GE3 has built-in overcurrent and overtemperature protection.
  6. What is the on-state resistance of SIHP12N60E-GE3?

    • The on-state resistance of SIHP12N60E-GE3 is typically around 0.45 ohms.
  7. Is SIHP12N60E-GE3 suitable for high-frequency switching applications?

    • Yes, SIHP12N60E-GE3 is designed for high-frequency switching applications.
  8. What is the operating temperature range of SIHP12N60E-GE3?

    • SIHP12N60E-GE3 can operate within a temperature range of -55°C to 150°C.
  9. Does SIHP12N60E-GE3 require a heatsink for proper operation?

    • It is recommended to use a heatsink with SIHP12N60E-GE3 for efficient heat dissipation.
  10. Can SIHP12N60E-GE3 be used in parallel to increase current handling capability?

    • Yes, SIHP12N60E-GE3 can be used in parallel to increase the overall current handling capability in a circuit.