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SIHG32N50D-E3
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SIHG32N50D-E3

Product Overview

Category

The SIHG32N50D-E3 belongs to the category of power MOSFETs.

Use

It is used as a switching device in power supply and motor control applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Package

The SIHG32N50D-E3 is available in a TO-247AC package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

The SIHG32N50D-E3 is typically packaged in reels or tubes, with varying quantities based on customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 32A
  • On-Resistance (RDS(on)): 0.19Ω
  • Gate Threshold Voltage (VGS(th)): 2.5V
  • Total Gate Charge (Qg): 60nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHG32N50D-E3 features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages

  • Suitable for high-voltage applications
  • Low power dissipation
  • Enhanced efficiency in power management

Disadvantages

  • May require additional circuitry for driving the gate due to high gate threshold voltage
  • Sensitivity to static electricity requires careful handling during assembly

Working Principles

The SIHG32N50D-E3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SIHG32N50D-E3 is commonly used in: - Switched-mode power supplies - Motor drives - Inverters - Power factor correction circuits

Detailed and Complete Alternative Models

  • IRFB4110PbF
  • FDPF33N25T
  • STW20NM50FD

In conclusion, the SIHG32N50D-E3 power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power management and control applications.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SIHG32N50D-E3 dalam solusi teknis

  1. What is the maximum drain-source voltage of SIHG32N50D-E3?

    • The maximum drain-source voltage of SIHG32N50D-E3 is 500V.

  2. What is the continuous drain current rating of SIHG32N50D-E3?

    • The continuous drain current rating of SIHG32N50D-E3 is 32A.

  3. What is the on-state resistance (RDS(on)) of SIHG32N50D-E3?

    • The on-state resistance (RDS(on)) of SIHG32N50D-E3 is typically 0.19 ohms.

  4. What is the gate threshold voltage of SIHG32N50D-E3?

    • The gate threshold voltage of SIHG32N50D-E3 is typically 2.5V.

  5. What are the typical applications for SIHG32N50D-E3?

    • SIHG32N50D-E3 is commonly used in power supplies, motor drives, and general switching applications.

  6. What is the operating temperature range of SIHG32N50D-E3?

    • The operating temperature range of SIHG32N50D-E3 is -55°C to 150°C.

  7. Does SIHG32N50D-E3 have built-in protection features?

    • SIHG32N50D-E3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.

  8. What is the gate charge of SIHG32N50D-E3?

    • The gate charge of SIHG32N50D-E3 is typically 40nC.

  9. Can SIHG32N50D-E3 be used in high-frequency switching applications?

    • Yes, SIHG32N50D-E3 can be used in high-frequency switching applications due to its fast switching characteristics.

  10. Is SIHG32N50D-E3 RoHS compliant?

    • Yes, SIHG32N50D-E3 is RoHS compliant, making it suitable for use in environmentally sensitive applications.