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SIHD6N80E-GE3
Product Overview
Category
The SIHD6N80E-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power supply applications, motor control, and other high-power switching circuits.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIHD6N80E-GE3 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is usually packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 800V
- Continuous Drain Current (ID): 6A
- On-Resistance (RDS(on)): 1.8Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 15nC
Detailed Pin Configuration
The SIHD6N80E-GE3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching circuits.
Advantages
- Suitable for high-voltage applications
- Low power dissipation
- Enhanced system efficiency
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- Requires careful handling due to its high voltage rating
Working Principles
The SIHD6N80E-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is widely used in: - Switched-mode power supplies - Motor control circuits - Inverters and converters
Detailed and Complete Alternative Models
Some alternative models to the SIHD6N80E-GE3 include: - IRFP460: Similar voltage and current ratings - STW9NK90Z: Comparable characteristics and performance - FDPF7N80NZ: Alternative option with similar specifications
In conclusion, the SIHD6N80E-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management and control applications.
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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SIHD6N80E-GE3 dalam solusi teknis
What is the maximum drain-source voltage of SIHD6N80E-GE3?
- The maximum drain-source voltage of SIHD6N80E-GE3 is 800V.
What is the continuous drain current rating of SIHD6N80E-GE3?
- The continuous drain current rating of SIHD6N80E-GE3 is 6A.
What is the on-state resistance (RDS(on)) of SIHD6N80E-GE3?
- The on-state resistance (RDS(on)) of SIHD6N80E-GE3 is typically 1.8 ohms.
What is the gate threshold voltage of SIHD6N80E-GE3?
- The gate threshold voltage of SIHD6N80E-GE3 is typically 2.5V.
What are the typical applications for SIHD6N80E-GE3?
- SIHD6N80E-GE3 is commonly used in power supplies, motor control, and lighting applications.
What is the operating temperature range of SIHD6N80E-GE3?
- The operating temperature range of SIHD6N80E-GE3 is -55°C to 150°C.
Is SIHD6N80E-GE3 suitable for high-frequency switching applications?
- Yes, SIHD6N80E-GE3 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.
Does SIHD6N80E-GE3 have built-in protection features?
- SIHD6N80E-GE3 has built-in overcurrent and thermal protection features to ensure safe operation.
What is the package type of SIHD6N80E-GE3?
- SIHD6N80E-GE3 is available in a TO-252-3 (DPAK) package.
Can SIHD6N80E-GE3 be used in automotive applications?
- Yes, SIHD6N80E-GE3 is suitable for automotive applications such as motor control and power management.