SIHD6N65E-GE3

Product Overview

The SIHD6N65E-GE3 belongs to the category of power MOSFETs and is commonly used in electronic devices for switching and amplification purposes. This semiconductor device exhibits characteristics such as high voltage capability, low on-state resistance, and fast switching speed. It is typically packaged in a TO-252-3 package and is available in various quantities to suit different production needs.

Specifications

• Voltage Rating: 650V
• Current Rating: 6A
• Package Type: TO-252-3
• Quantity Options: Available in reels of 2500 units

Detailed Pin Configuration

The SIHD6N65E-GE3 features a standard TO-252-3 pin configuration with the following pinout: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High Voltage Capability: The device can withstand high voltage levels, making it suitable for applications requiring robust performance.
• Low On-State Resistance: This feature ensures minimal power loss during operation, contributing to higher efficiency.
• Fast Switching Speed: The MOSFET offers rapid switching characteristics, enabling quick response in electronic circuits.

Advantages and Disadvantages

Advantages

• Enhanced Efficiency: Low on-state resistance leads to improved energy efficiency.
• High Voltage Handling: Capable of withstanding high voltage levels, expanding its application range.

Disadvantages

• Sensitivity to Overvoltage: Excessive voltage spikes may affect the device's longevity and performance.

Working Principles

The SIHD6N65E-GE3 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the source and drain terminals. When a sufficient voltage is applied to the gate, the device enters a conductive state, allowing current to flow through.

Detailed Application Field Plans

The SIHD6N65E-GE3 finds extensive use in various applications, including: - Switched-Mode Power Supplies (SMPS) - Motor Control Systems - Lighting Systems - Audio Amplifiers

Detailed and Complete Alternative Models

For applications requiring similar specifications and performance, alternative models to consider include: - SIHD6N60E-GE3 - SIHD6N70E-GE3 - SIHD6N55E-GE3

In conclusion, the SIHD6N65E-GE3 power MOSFET offers high voltage capability, low on-state resistance, and fast switching speed, making it a versatile component for a wide range of electronic applications.

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