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SIHA6N80E-GE3
Product Overview
Category
The SIHA6N80E-GE3 belongs to the category of power MOSFETs.
Use
It is used for high-voltage, high-speed switching applications in various electronic circuits and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIHA6N80E-GE3 is typically available in a TO-220 package.
Essence
This power MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
The SIHA6N80E-GE3 is usually packaged in reels or tubes, with varying quantities based on customer requirements.
Specifications
- Voltage Rating: 800V
- Current Rating: 6A
- On-Resistance: 1.8Ω
- Gate Charge: 16nC
- Operating Temperature: -55°C to 150°C
- Package Type: TO-220
Detailed Pin Configuration
The SIHA6N80E-GE3 features a standard TO-220 pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in diverse applications
- Low on-resistance minimizes power loss and improves efficiency
- Fast switching speed enables rapid response in switching circuits
- Low gate charge facilitates quick and precise control
Advantages
- Suitable for high-voltage applications
- Efficient power management due to low on-resistance
- Fast switching speed enhances performance in dynamic systems
Disadvantages
- May require additional circuitry for driving the gate due to high gate charge
- Limited to specific voltage and current ratings
Working Principles
The SIHA6N80E-GE3 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to regulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SIHA6N80E-GE3 is commonly used in the following applications: - Switching power supplies - Motor control systems - Inverters and converters - Electronic ballasts - Lighting systems
Detailed and Complete Alternative Models
Some alternative models to the SIHA6N80E-GE3 include: - IRFP460A - STW20NM60 - FQP27P06
In conclusion, the SIHA6N80E-GE3 power MOSFET offers high-voltage capability, fast switching speed, and low on-resistance, making it suitable for various high-power electronic applications.
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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SIHA6N80E-GE3 dalam solusi teknis
What is the maximum drain-source voltage of SIHA6N80E-GE3?
- The maximum drain-source voltage of SIHA6N80E-GE3 is 800V.
What is the continuous drain current rating of SIHA6N80E-GE3?
- The continuous drain current rating of SIHA6N80E-GE3 is 6A.
What is the on-resistance of SIHA6N80E-GE3?
- The on-resistance of SIHA6N80E-GE3 is typically 1.8 ohms.
What is the gate threshold voltage of SIHA6N80E-GE3?
- The gate threshold voltage of SIHA6N80E-GE3 is typically 2.5V.
What are the typical applications for SIHA6N80E-GE3?
- SIHA6N80E-GE3 is commonly used in power supplies, motor control, and lighting applications.
What is the operating temperature range of SIHA6N80E-GE3?
- The operating temperature range of SIHA6N80E-GE3 is typically -55°C to 150°C.
Does SIHA6N80E-GE3 require a heat sink for operation?
- It is recommended to use a heat sink for SIHA6N80E-GE3 when operating at high currents or in high ambient temperatures.
What is the gate charge of SIHA6N80E-GE3?
- The gate charge of SIHA6N80E-GE3 is typically 16nC.
Is SIHA6N80E-GE3 suitable for high-frequency switching applications?
- Yes, SIHA6N80E-GE3 is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.
What are the key advantages of using SIHA6N80E-GE3 in technical solutions?
- The key advantages of SIHA6N80E-GE3 include high voltage capability, low on-resistance, and suitability for various power electronics applications.