SIC462ED-T1-GE3

Product Overview

Category

SIC462ED-T1-GE3 belongs to the category of power semiconductor devices.

Use

This product is primarily used in power electronics applications, such as power supplies, motor drives, and inverters.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• High thermal efficiency

Package

The SIC462ED-T1-GE3 comes in a compact and robust package, designed to withstand high temperatures and provide excellent thermal performance.

Essence

The essence of this product lies in its ability to efficiently control and switch high voltages while minimizing power losses.

Packaging/Quantity

The SIC462ED-T1-GE3 is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Maximum Voltage Rating: 1200V
• Continuous Drain Current: 20A
• On-Resistance: 50mΩ
• Gate Threshold Voltage: 4V
• Gate Charge: 25nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SIC462ED-T1-GE3 has a standard pin configuration with the following connections:

• Pin 1: Gate
• Pin 2: Source
• Pin 3: Drain

Functional Features

• High voltage blocking capability
• Low conduction losses
• Fast switching speed
• Enhanced thermal management

Advantages

• Improved system efficiency
• Reduced power losses
• Compact size
• Enhanced reliability

Disadvantages

• Higher cost compared to traditional silicon-based devices
• Requires specialized knowledge for proper implementation

Working Principles

The SIC462ED-T1-GE3 is based on Silicon Carbide (SiC) technology, which offers superior performance compared to traditional silicon-based devices. It utilizes the unique properties of SiC to achieve high voltage blocking capability, low on-resistance, and fast switching speed. The device operates by controlling the flow of current between the source and drain terminals through the gate terminal.

Detailed Application Field Plans

The SIC462ED-T1-GE3 is suitable for a wide range of power electronics applications, including:

1. Power supplies: This device can be used in high-efficiency power supply designs, enabling compact and energy-efficient solutions.
2. Motor drives: The SIC462ED-T1-GE3 can drive motors with high precision and efficiency, making it ideal for electric vehicle applications.
3. Inverters: It can be employed in inverters for renewable energy systems, such as solar and wind power, due to its high voltage capability and low losses.

Detailed and Complete Alternative Models

1. SIC461ED-T1-GE3: Similar to SIC462ED-T1-GE3 but with a lower voltage rating of 900V.
2. SIC463ED-T1-GE3: Similar to SIC462ED-T1-GE3 but with a higher voltage rating of 1600V.
3. SIC464ED-T1-GE3: Similar to SIC462ED-T1-GE3 but with a higher continuous drain current of 30A.

These alternative models provide flexibility in choosing the appropriate device based on specific application requirements.

In conclusion, the SIC462ED-T1-GE3 is a high-performance power semiconductor device that offers numerous advantages in terms of efficiency, reliability, and thermal management. Its unique characteristics make it well-suited for various power electronics applications, particularly those requiring high voltage capabilities.