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SI7455DP-T1-GE3

SI7455DP-T1-GE3

Product Overview

Category

The SI7455DP-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • Low on-resistance
  • High current-carrying capability
  • Fast switching speed
  • Low gate drive requirements

Package

The SI7455DP-T1-GE3 is typically available in a compact and thermally efficient PowerPAK® SO-8 package.

Essence

This MOSFET offers high performance and efficiency in power management applications.

Packaging/Quantity

It is usually supplied in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 10A
  • RDS(ON) (Max) @ VGS = 10V: 6.5mΩ
  • Gate-Source Voltage (VGS) (Max): ±20V
  • Total Gate Charge (Qg): 13nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI7455DP-T1-GE3 features the following pin configuration: 1. Source (S) 2. Gate (G) 3. Drain (D) 4. N/C 5. N/C 6. Drain (D) 7. Source (S) 8. N/C

Functional Features

  • Low on-resistance minimizes power losses
  • Fast switching speed enables efficient operation
  • High current-carrying capability supports various power management applications
  • Low gate drive requirements reduce control circuit complexity

Advantages and Disadvantages

Advantages

  • High efficiency
  • Compact package
  • Suitable for high-frequency applications

Disadvantages

  • Limited maximum voltage and current ratings compared to higher-power MOSFETs
  • Sensitive to static discharge due to its high-speed characteristics

Working Principles

The SI7455DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is well-suited for a wide range of power management applications, including but not limited to: - DC-DC converters - Voltage regulation in portable devices - Motor control circuits - LED lighting systems

Detailed and Complete Alternative Models

Some alternative models to the SI7455DP-T1-GE3 include: - SI7469DP-T1-GE3 - SI7436DP-T1-GE3 - SI7489DP-T1-GE3

This completes the entry for the SI7455DP-T1-GE3 power MOSFET, covering its product details, specifications, functional features, application plans, and alternative models.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SI7455DP-T1-GE3 dalam solusi teknis

  1. What is the maximum drain-source voltage of SI7455DP-T1-GE3?

    • The maximum drain-source voltage of SI7455DP-T1-GE3 is 30V.
  2. What is the continuous drain current rating of SI7455DP-T1-GE3?

    • The continuous drain current rating of SI7455DP-T1-GE3 is 10A.
  3. What is the on-resistance of SI7455DP-T1-GE3?

    • The on-resistance of SI7455DP-T1-GE3 is typically 8.5mΩ at Vgs=10V.
  4. What is the gate threshold voltage of SI7455DP-T1-GE3?

    • The gate threshold voltage of SI7455DP-T1-GE3 is typically 1.5V.
  5. What is the power dissipation of SI7455DP-T1-GE3?

    • The power dissipation of SI7455DP-T1-GE3 is 2.5W.
  6. What are the recommended operating temperature range for SI7455DP-T1-GE3?

    • The recommended operating temperature range for SI7455DP-T1-GE3 is -55°C to 150°C.
  7. Is SI7455DP-T1-GE3 suitable for automotive applications?

    • Yes, SI7455DP-T1-GE3 is AEC-Q101 qualified and suitable for automotive applications.
  8. Does SI7455DP-T1-GE3 have built-in ESD protection?

    • Yes, SI7455DP-T1-GE3 has built-in ESD protection.
  9. What package type does SI7455DP-T1-GE3 come in?

    • SI7455DP-T1-GE3 comes in a PowerPAK® SO-8 package.
  10. Is SI7455DP-T1-GE3 RoHS compliant?

    • Yes, SI7455DP-T1-GE3 is RoHS compliant.