SI5484DU-T1-GE3

Introduction

The SI5484DU-T1-GE3 is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and functional features. In this entry, we will provide an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SI5484DU-T1-GE3.

Basic Information Overview

• Category: Power MOSFET
• Use: The SI5484DU-T1-GE3 is used as a switching component in electronic circuits, particularly in power management applications.
• Characteristics: This MOSFET offers low on-resistance, high current capability, and efficient switching performance. It is designed for use in a wide range of voltage and current levels.
• Package: The SI5484DU-T1-GE3 is available in a compact and industry-standard PowerPAK® SO-8 package.
• Essence: The essence of this component lies in its ability to efficiently control power flow in electronic systems.
• Packaging/Quantity: The SI5484DU-T1-GE3 is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

• Voltage Rating: 30V
• Current Rating: 36A
• On-Resistance: 5.5mΩ
• Package Type: PowerPAK® SO-8
• Operating Temperature Range: -55°C to 150°C
• Gate Charge (Qg): 12nC
• Input Capacitance (Ciss): 3700pF
• Output Capacitance (Coss): 570pF
• Reverse Transfer Capacitance (Crss): 400pF

Detailed Pin Configuration

The SI5484DU-T1-GE3 features a standard SO-8 pin configuration: 1. GATE: Gate terminal 2. DRAIN: Drain terminal 3. SOURCE: Source terminal 4. N/C: Not connected 5. SOURCE: Source terminal 6. DRAIN: Drain terminal 7. N/C: Not connected 8. GATE: Gate terminal

Functional Features

• Low On-Resistance: Enables efficient power flow and minimizes power dissipation.
• High Current Capability: Suitable for handling high current loads in various applications.
• Fast Switching Performance: Facilitates rapid switching transitions, contributing to overall system efficiency.
• Enhanced Thermal Performance: Designed to dissipate heat effectively, ensuring reliable operation under varying conditions.

Advantages and Disadvantages

Advantages

• High current handling capability
• Low on-resistance for reduced power loss
• Compact and industry-standard package
• Efficient thermal performance

Disadvantages

• Sensitive to static discharge
• Limited voltage rating compared to some alternatives

Working Principles

The SI5484DU-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material. When a suitable gate voltage is applied, the MOSFET allows or blocks the flow of current between the drain and source terminals, effectively controlling the power flow in the circuit.

Detailed Application Field Plans

The SI5484DU-T1-GE3 finds extensive use in various applications, including but not limited to: - Power supply units - Motor control systems - LED lighting - Battery management systems - DC-DC converters - Solar inverters

Detailed and Complete Alternative Models

Some alternative models to the SI5484DU-T1-GE3 include: - SI7469DP-T1-GE3 - SI7147DP-T1-GE3 - SI7852DP-T1-GE3 - SI6543DP-T1-GE3

In conclusion, the SI5484DU-T1-GE3 power MOSFET offers a compelling combination of performance, reliability, and versatility, making it a preferred choice for a wide range of power management applications.

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