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SI4884BDY-T1-GE3
Product Overview
Category
The SI4884BDY-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and power switching.
Characteristics
- High efficiency
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SI4884BDY-T1-GE3 is typically available in a small outline package (SOP-8).
Essence
This MOSFET is essential for efficient power control and management in various electronic devices and systems.
Packaging/Quantity
It is usually supplied in reels with a quantity of 2500 units per reel.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 12A
- RDS(ON) (Max) @ VGS = 10V: 6.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 15nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SI4884BDY-T1-GE3 features the following pin configuration: 1. Gate (G) 2. Source (S) 3. Drain (D) 4. N/C 5. N/C 6. Source (S) 7. Drain (D) 8. Gate (G)
Functional Features
- Low on-resistance for minimal power dissipation
- Fast switching speed for improved efficiency
- Wide operating temperature range for versatility
- Enhanced thermal performance for reliability
Advantages
- High efficiency and low power dissipation
- Fast response time for rapid power switching
- Versatile operating temperature range
- Reliable thermal performance
Disadvantages
- Sensitive to static electricity
- May require additional ESD protection measures during handling
Working Principles
The SI4884BDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is widely used in various applications, including: - Switching power supplies - DC-DC converters - Motor control - Battery management systems - LED lighting
Detailed and Complete Alternative Models
Some alternative models to the SI4884BDY-T1-GE3 include: - SI4885BDY-T1-GE3 - SI4886BDY-T1-GE3 - SI4887BDY-T1-GE3
In conclusion, the SI4884BDY-T1-GE3 power MOSFET offers high efficiency, fast switching speed, and reliable performance, making it an essential component in power management applications across various industries.
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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SI4884BDY-T1-GE3 dalam solusi teknis
What is the maximum voltage rating for SI4884BDY-T1-GE3?
- The maximum voltage rating for SI4884BDY-T1-GE3 is typically 30V.
What is the maximum continuous drain current for SI4884BDY-T1-GE3?
- The maximum continuous drain current for SI4884BDY-T1-GE3 is typically 6.5A.
What is the typical on-resistance for SI4884BDY-T1-GE3?
- The typical on-resistance for SI4884BDY-T1-GE3 is around 10mΩ.
What is the recommended operating temperature range for SI4884BDY-T1-GE3?
- The recommended operating temperature range for SI4884BDY-T1-GE3 is typically -55°C to 150°C.
Is SI4884BDY-T1-GE3 suitable for automotive applications?
- Yes, SI4884BDY-T1-GE3 is designed to meet the requirements for automotive applications.
Does SI4884BDY-T1-GE3 have built-in ESD protection?
- Yes, SI4884BDY-T1-GE3 features built-in ESD protection, enhancing its robustness in various applications.
What is the package type for SI4884BDY-T1-GE3?
- SI4884BDY-T1-GE3 comes in a PowerPAK® SO-8 package, which offers a compact and efficient form factor.
Can SI4884BDY-T1-GE3 be used in power management applications?
- Yes, SI4884BDY-T1-GE3 is suitable for power management applications due to its low on-resistance and high current handling capabilities.
Are there any application notes or reference designs available for SI4884BDY-T1-GE3?
- Yes, application notes and reference designs are available to assist in the implementation of SI4884BDY-T1-GE3 in various technical solutions.
What are the key advantages of using SI4884BDY-T1-GE3 in technical solutions?
- Some key advantages of using SI4884BDY-T1-GE3 include its high efficiency, low power dissipation, and reliable performance in demanding environments.