SI4406DY-T1-GE3

Product Overview

Category

The SI4406DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in various electronic circuits and power management applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SI4406DY-T1-GE3 is typically available in a DPAK (TO-252) package.

Essence

This MOSFET is essential for efficient power control and management in electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels with a quantity of 2500 units per reel.

Specifications

• Drain-Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 48A
• RDS(ON) (Max) @ VGS = 10V: 5.5mΩ
• Gate-Source Voltage (Vgs): ±20V
• Power Dissipation (Pd): 2.5W

Detailed Pin Configuration

The SI4406DY-T1-GE3 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

• Low on-resistance for minimal power loss
• High voltage capability for versatile applications
• Fast switching speed for efficient power management

Advantages

• Efficient power control
• Versatile application range
• Fast response time

Disadvantages

• Sensitive to static electricity
• Requires careful handling during installation

Working Principles

The SI4406DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - Motor control - Battery management systems - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SI4406DY-T1-GE3 include: - SI4410DY-T1-GE3 - SI4435DDY-T1-GE3 - SI4459ADY-T1-GE3

In conclusion, the SI4406DY-T1-GE3 power MOSFET offers high performance and efficiency in various power management applications, making it a crucial component in modern electronic systems.

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