SI4401DDY-T1-GE3

Introduction

The SI4401DDY-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductor products. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Discrete Semiconductor Product
• Use: Power MOSFET for electronic applications
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: D-PAK (TO-252)
• Essence: Power management solution for electronic circuits
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

The SI4401DDY-T1-GE3 features the following specifications: - Voltage Rating: 30V - Continuous Drain Current: 5.6A - On-Resistance: 40mΩ - Gate Threshold Voltage: 1.5V - Power Dissipation: 2.5W

Detailed Pin Configuration

The pin configuration of SI4401DDY-T1-GE3 is as follows: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability for power management
• Low on-resistance for efficient power transfer
• Fast switching speed for improved performance

Advantages and Disadvantages

Advantages: - High voltage capability - Low on-resistance - Fast switching speed

Disadvantages: - Sensitive to static electricity - Limited maximum current rating

Working Principles

The SI4401DDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel.

Detailed Application Field Plans

The SI4401DDY-T1-GE3 is commonly used in the following application fields: - Power supplies - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

Some alternative models to SI4401DDY-T1-GE3 include: - SI2301DS-T1-GE3 - SI2319DS-T1-GE3 - SI2323DS-T1-GE3

In conclusion, the SI4401DDY-T1-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications.

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