SI4401BDY-T1-E3

Product Overview

• Category: MOSFET Transistor
• Use: Power switching applications
• Characteristics: High voltage, low on-resistance, small package size
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power management
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage - Drain-Source Breakdown (V(BR)DSS): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.7A
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 5.7A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) @ Vgs: 12nC @ 10V

Detailed Pin Configuration

• Pin 1: Source
• Pin 2: Gate
• Pin 3: Drain

Functional Features

• Fast switching speed
• Low gate charge
• Low on-resistance

Advantages and Disadvantages

• Advantages:
  • High efficiency
  • Small form factor
  • Low power dissipation
• Disadvantages:
  • Sensitive to static electricity
  • Limited maximum voltage rating

Working Principles

The SI4401BDY-T1-E3 operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a sufficient voltage is applied to the gate, the transistor allows current to flow through, enabling power switching in various applications.

Detailed Application Field Plans

This MOSFET transistor is commonly used in: - DC-DC converters - Power management systems - Motor control circuits - Battery protection circuits

Detailed and Complete Alternative Models

• Alternative Model 1: SI2301DS-T1-GE3
• Alternative Model 2: SI5435DC-T1-GE3
• Alternative Model 3: SI7469DP-T1-GE3

Note: The alternative models listed above offer similar performance and characteristics suitable for substitution.

This comprehensive entry provides an in-depth understanding of the SI4401BDY-T1-E3 MOSFET transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.