SI4170DY-T1-GE3

Introduction

The SI4170DY-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Switching and amplification in electronic circuits
• Characteristics: High power handling capability, low on-resistance, fast switching speed
• Package: D-PAK (TO-252)
• Essence: Efficient power management and control
• Packaging/Quantity: Available in tape and reel packaging with varying quantities

Specifications

The SI4170DY-T1-GE3 features include: - Drain-Source Voltage (Vdss): 100V - Continuous Drain Current (Id): 12A - RDS(ON) (Max) @ VGS = 10V: 20mΩ - Gate-Source Voltage (Vgs): ±20V - Total Gate Charge (Qg): 18nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The pin configuration of SI4170DY-T1-GE3 is as follows: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for efficient operation
• High power handling capability for diverse applications

Advantages and Disadvantages

Advantages: - Efficient power management - Fast response time - Low power dissipation

Disadvantages: - Sensitivity to overvoltage conditions - Limited maximum operating temperature

Working Principles

The SI4170DY-T1-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the device can effectively switch and amplify electrical signals in various circuit configurations.

Detailed Application Field Plans

The SI4170DY-T1-GE3 finds extensive use in the following application fields: - Switching power supplies - Motor control systems - LED lighting - Battery management systems - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to SI4170DY-T1-GE3 include: - SI4170DY-T1-E3 - SI4170DY-T1-RE3 - SI4170DY-T1-GE3-ND

In conclusion, the SI4170DY-T1-GE3 power MOSFET offers high-performance characteristics and versatile applications, making it an essential component in modern electronic designs.

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