SI4143DY-T1-GE3

Product Overview

Category

The SI4143DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

• High power handling capability
• Low on-resistance
• Fast switching speed
• Low gate drive requirements

Package

The SI4143DY-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET offers high efficiency and reliability in power management systems.

Packaging/Quantity

It is usually supplied in reels with a quantity of 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 12A
• RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
• Gate-Source Voltage (VGS) (Max): ±20V
• Total Gate Charge (Qg): 13nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4143DY-T1-GE3 features a standard SO-8 pin configuration: 1. GATE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. DRAIN 7. DRAIN 8. SOURCE

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for improved efficiency
• Robust construction for reliable performance in demanding environments

Advantages

• High power handling capability
• Efficient voltage regulation
• Compact package size

Disadvantages

• Sensitive to static discharge
• Requires careful handling during assembly

Working Principles

The SI4143DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to regulate and control power flow within electronic circuits.

Detailed Application Field Plans

This MOSFET is well-suited for various power management applications, including: - DC-DC converters - Voltage regulation in automotive electronics - Motor control systems - Battery management systems

Detailed and Complete Alternative Models

• SI3443DV-T1-GE3
• SI4943DY-T1-GE3
• SI7143DP-T1-GE3
• SI7843DN-T1-GE3

In conclusion, the SI4143DY-T1-GE3 power MOSFET offers high-performance characteristics and is widely applicable in diverse power management systems, making it a valuable component in modern electronic designs.

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