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SI3430DV-T1-GE3

SI3430DV-T1-GE3

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electronic signals in power applications - Characteristics: High voltage and current handling capabilities, low on-state resistance, fast switching speed - Package: DFN (Dual Flat No-Lead) - Essence: Efficient power management and control - Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications: - Voltage Rating: 30V - Current Rating: 12A - On-State Resistance: 8.5mΩ - Gate Threshold Voltage: 1V - Power Dissipation: 2.5W

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Drain

Functional Features: - Low on-state resistance for minimal power loss - Fast switching speed for efficient power control - Enhanced thermal performance for reliability

Advantages: - High efficiency in power management - Compact DFN package for space-saving designs - Suitable for high-frequency applications

Disadvantages: - Sensitive to overvoltage conditions - Limited maximum voltage rating compared to some alternatives

Working Principles: The SI3430DV-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device.

Detailed Application Field Plans: - DC-DC converters - Motor control systems - Power supplies - LED lighting

Detailed and Complete Alternative Models: - Infineon IPP60R190C6 - Vishay Si7157DP

This comprehensive entry provides a detailed overview of the SI3430DV-T1-GE3, covering its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SI3430DV-T1-GE3 dalam solusi teknis

  1. What is the maximum voltage rating for SI3430DV-T1-GE3?

    • The maximum voltage rating for SI3430DV-T1-GE3 is 30V.
  2. What is the typical on-resistance of SI3430DV-T1-GE3?

    • The typical on-resistance of SI3430DV-T1-GE3 is 6.5 mΩ.
  3. What is the maximum continuous drain current for SI3430DV-T1-GE3?

    • The maximum continuous drain current for SI3430DV-T1-GE3 is 40A.
  4. What is the typical gate charge of SI3430DV-T1-GE3?

    • The typical gate charge of SI3430DV-T1-GE3 is 11nC.
  5. What are the recommended operating temperature range for SI3430DV-T1-GE3?

    • The recommended operating temperature range for SI3430DV-T1-GE3 is -55°C to 150°C.
  6. What is the package type for SI3430DV-T1-GE3?

    • SI3430DV-T1-GE3 comes in a PowerPAK® SO-8 package.
  7. Is SI3430DV-T1-GE3 suitable for automotive applications?

    • Yes, SI3430DV-T1-GE3 is suitable for automotive applications.
  8. Does SI3430DV-T1-GE3 have built-in protection features?

    • Yes, SI3430DV-T1-GE3 has built-in overcurrent protection and thermal shutdown features.
  9. What is the typical input capacitance of SI3430DV-T1-GE3?

    • The typical input capacitance of SI3430DV-T1-GE3 is 3700pF.
  10. Is SI3430DV-T1-GE3 RoHS compliant?

    • Yes, SI3430DV-T1-GE3 is RoHS compliant.