SI3429EDV-T1-GE3

Introduction

The SI3429EDV-T1-GE3 is a power MOSFET belonging to the category of electronic components. This device is commonly used in various applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Switching and amplification in electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power management and control
• Packaging/Quantity: Available in tape and reel packaging, quantity varies by supplier

Specifications

• Voltage Rating: 30V
• Current Rating: 12A
• On-Resistance: 8.5mΩ
• Package Type: DFN5x6

Detailed Pin Configuration

The SI3429EDV-T1-GE3 features a DFN5x6 package with the following pin configuration: 1. Gate 2. Source 3. Drain 4. N/C (Not Connected) 5. Source

Functional Features

• High Voltage Capability: Suitable for applications requiring high voltage handling
• Low On-Resistance: Minimizes power loss and heat generation
• Fast Switching Speed: Enables efficient switching in electronic circuits

Advantages and Disadvantages

Advantages

• Efficient power management
• Low power dissipation
• Fast response time

Disadvantages

• Sensitivity to overvoltage conditions
• Limited current handling capacity

Working Principles

The SI3429EDV-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

This power MOSFET is widely used in the following applications: - DC-DC converters - Motor control - Power supplies - Battery management systems

Detailed and Complete Alternative Models

• SI3443DV-T1-GE3: Similar specifications with enhanced current handling capacity
• SI3417DV-T1-GE3: Lower on-resistance for improved efficiency
• SI3459DV-T1-GE3: Higher voltage rating for specialized applications

In conclusion, the SI3429EDV-T1-GE3 power MOSFET offers efficient power management and control capabilities, making it a versatile component in various electronic applications.

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