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SI3424BDV-T1-E3
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SI3424BDV-T1-E3

Product Overview

Category

The SI3424BDV-T1-E3 belongs to the category of power MOSFETs.

Use

It is commonly used for power management applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SI3424BDV-T1-E3 is typically available in a small outline package (SOP) or a dual flat no-leads (DFN) package.

Essence

This MOSFET is essential for efficient power control and management in electronic circuits.

Packaging/Quantity

It is usually supplied in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 6.5A
  • On-Resistance (RDS(on)): 0.025 ohms
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 8.5nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI3424BDV-T1-E3 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • Low power dissipation
  • Enhanced thermal performance
  • ESD protection
  • Avalanche ruggedness

Advantages

  • High efficiency
  • Compact design
  • Reliable performance
  • Suitable for high-frequency applications

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SI3424BDV-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - DC-DC converters - Motor control circuits - Battery management systems - LED lighting applications

Detailed and Complete Alternative Models

Some alternative models to the SI3424BDV-T1-E3 include: - SI3442DV-T1-GE3 - SI3456CDV-T1-GE3 - SI3412BDV-T1-GE3

In conclusion, the SI3424BDV-T1-E3 is a versatile power MOSFET with excellent characteristics and functional features, making it suitable for a wide range of power management applications.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SI3424BDV-T1-E3 dalam solusi teknis

  1. What is the maximum voltage rating for SI3424BDV-T1-E3?

    • The maximum voltage rating for SI3424BDV-T1-E3 is 30V.

  2. What is the typical on-resistance of SI3424BDV-T1-E3?

    • The typical on-resistance of SI3424BDV-T1-E3 is 9.5mΩ.

  3. What is the maximum continuous drain current for SI3424BDV-T1-E3?

    • The maximum continuous drain current for SI3424BDV-T1-E3 is 100A.

  4. What is the gate threshold voltage for SI3424BDV-T1-E3?

    • The gate threshold voltage for SI3424BDV-T1-E3 is typically 1.8V.

  5. What is the package type for SI3424BDV-T1-E3?

    • SI3424BDV-T1-E3 comes in a PowerPAK® SO-8 package.

  6. What is the operating temperature range for SI3424BDV-T1-E3?

    • The operating temperature range for SI3424BDV-T1-E3 is -55°C to 150°C.

  7. Is SI3424BDV-T1-E3 suitable for automotive applications?

    • Yes, SI3424BDV-T1-E3 is AEC-Q101 qualified and suitable for automotive applications.

  8. Does SI3424BDV-T1-E3 have built-in ESD protection?

    • Yes, SI3424BDV-T1-E3 features built-in ESD protection.

  9. What is the typical input capacitance of SI3424BDV-T1-E3?

    • The typical input capacitance of SI3424BDV-T1-E3 is 3700pF.

  10. Can SI3424BDV-T1-E3 be used in power management applications?

    • Yes, SI3424BDV-T1-E3 is suitable for power management applications due to its high current handling capability and low on-resistance.