SI2321DS-T1-GE3

Product Overview

Category

The SI2321DS-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in various electronic devices and circuits for switching and amplification purposes.

Characteristics

• Low on-resistance
• High current capability
• Fast switching speed
• Low gate drive voltage
• Small package size

Package

The SI2321DS-T1-GE3 is typically available in a small surface-mount package, such as SOT-23.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is usually supplied in reels or tubes containing a specific quantity, such as 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 20V
• Continuous Drain Current (ID): 2.5A
• On-Resistance (RDS(ON)): 75mΩ
• Power Dissipation (PD): 1.25W
• Gate-Source Voltage (VGS): ±8V

Detailed Pin Configuration

The SI2321DS-T1-GE3 typically has three pins: Gate (G), Drain (D), and Source (S). The pinout configuration is as follows: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

Functional Features

• Efficient power switching
• Low power dissipation
• Compatibility with low-voltage control signals
• Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

• Small form factor
• Low on-resistance
• Fast switching speed
• Suitable for low-voltage applications

Disadvantages

• Limited maximum drain-source voltage
• Moderate power dissipation capability

Working Principles

The SI2321DS-T1-GE3 operates based on the principles of field-effect transistors, where the control voltage applied to the gate terminal modulates the conductivity between the drain and source terminals, allowing for efficient power switching and control.

Detailed Application Field Plans

The SI2321DS-T1-GE3 is widely used in: - Portable electronic devices - Battery management systems - LED lighting control - Power supply units - Motor control circuits

Detailed and Complete Alternative Models

Some alternative models to the SI2321DS-T1-GE3 include: - SI2301DS-T1-GE3 - SI2331DS-T1-GE3 - SI2319DS-T1-GE3

In conclusion, the SI2321DS-T1-GE3 power MOSFET offers compact size, efficient performance, and versatility, making it an ideal choice for various low-power electronic applications.

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