Lihat spesifikasi untuk detail produk.
SI2311DS-T1-GE3
Product Overview
Category
The SI2311DS-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in various electronic circuits and applications that require efficient power management and switching.
Characteristics
- Low on-resistance
- High current capability
- Fast switching speed
- Low gate drive voltage
- Enhanced thermal performance
Package
The SI2311DS-T1-GE3 is typically available in a compact and industry-standard SOT-23 package.
Essence
This MOSFET is essential for optimizing power efficiency and control in electronic devices and systems.
Packaging/Quantity
It is usually supplied in reels with a standard quantity of 3000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 20V
- Continuous Drain Current (ID): 2.7A
- On-Resistance (RDS(ON)): 75mΩ
- Power Dissipation (PD): 1.25W
- Gate-Source Voltage (VGS): ±8V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SI2311DS-T1-GE3 features a standard SOT-23 pin configuration with three pins: Drain (D), Source (S), and Gate (G).
Functional Features
- Efficient power management
- Fast switching for improved performance
- Low power consumption
- Compatibility with low-voltage control signals
Advantages
- Compact package size
- Enhanced thermal characteristics
- Suitable for low-power applications
- Cost-effective solution for power switching needs
Disadvantages
- Limited maximum voltage and current ratings
- Not suitable for high-power applications
Working Principles
The SI2311DS-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to regulate power flow within electronic circuits.
Detailed Application Field Plans
- Battery management systems
- Portable electronic devices
- LED lighting control
- DC-DC converters
- Motor control circuits
Detailed and Complete Alternative Models
- SI2301DS-T1-GE3
- SI2323DS-T1-GE3
- SI2335DS-T1-GE3
- SI2351DS-T1-GE3
In conclusion, the SI2311DS-T1-GE3 power MOSFET offers a compact and efficient solution for power management and switching applications, making it an ideal choice for various electronic designs.
[Word Count: 328]
Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SI2311DS-T1-GE3 dalam solusi teknis
What is the maximum voltage rating for SI2311DS-T1-GE3?
- The maximum voltage rating for SI2311DS-T1-GE3 is 20V.
What is the typical on-state resistance of SI2311DS-T1-GE3?
- The typical on-state resistance of SI2311DS-T1-GE3 is 60mΩ.
What is the maximum continuous drain current for SI2311DS-T1-GE3?
- The maximum continuous drain current for SI2311DS-T1-GE3 is 6.3A.
What is the gate threshold voltage for SI2311DS-T1-GE3?
- The gate threshold voltage for SI2311DS-T1-GE3 is typically 1.5V.
What is the package type for SI2311DS-T1-GE3?
- SI2311DS-T1-GE3 comes in a SOT-23 package.
Is SI2311DS-T1-GE3 suitable for battery protection applications?
- Yes, SI2311DS-T1-GE3 is suitable for battery protection applications due to its low on-state resistance and high continuous drain current.
Can SI2311DS-T1-GE3 be used in load switch applications?
- Yes, SI2311DS-T1-GE3 is commonly used in load switch applications due to its low on-state resistance and high current handling capability.
What are the typical applications for SI2311DS-T1-GE3 in technical solutions?
- Typical applications for SI2311DS-T1-GE3 include power management, battery protection, load switching, and DC-DC converters.
Does SI2311DS-T1-GE3 have built-in ESD protection?
- Yes, SI2311DS-T1-GE3 features built-in ESD protection, making it suitable for robust and reliable circuit designs.
What is the operating temperature range for SI2311DS-T1-GE3?
- SI2311DS-T1-GE3 has an operating temperature range of -55°C to 150°C, making it suitable for a wide range of environmental conditions.