SI1469DH-T1-GE3

Introduction

The SI1469DH-T1-GE3 is a semiconductor product belonging to the category of power management and MOSFETs. This device is commonly used in various electronic applications due to its unique characteristics and functional features. In this entry, we will provide an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SI1469DH-T1-GE3.

Basic Information Overview

• Category: Power Management and MOSFETs
• Use: The SI1469DH-T1-GE3 is utilized for power switching and amplification in electronic circuits.
• Characteristics: High voltage capability, low on-resistance, fast switching speed, and low gate charge.
• Package: TO-252-3 (DPAK)
• Essence: The essence of SI1469DH-T1-GE3 lies in its ability to efficiently control and manage power flow within electronic systems.
• Packaging/Quantity: Typically packaged in reels with a quantity of 2500 units per reel.

Specifications

• Voltage Rating: 100V
• Current Rating: 30A
• On-Resistance: 12mΩ
• Gate Charge: 18nC
• Operating Temperature Range: -55°C to 175°C
• Package Type: DPAK (TO-252-3)

Detailed Pin Configuration

The SI1469DH-T1-GE3 has three pins arranged as follows: 1. Pin 1: Gate (G) 2. Pin 2: Drain (D) 3. Pin 3: Source (S)

Functional Features

• High Voltage Capability: Allows the device to handle high voltage levels effectively.
• Low On-Resistance: Minimizes power loss and heat generation during operation.
• Fast Switching Speed: Enables rapid switching between on and off states.
• Low Gate Charge: Facilitates efficient control of the MOSFET.

Advantages and Disadvantages

Advantages

• Efficient power management
• Reduced power dissipation
• Fast response time

Disadvantages

• Sensitivity to static electricity
• Limited maximum voltage and current ratings

Working Principles

The SI1469DH-T1-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the device can effectively switch between conducting and non-conducting states, thereby regulating the power flow in the circuit.

Detailed Application Field Plans

The SI1469DH-T1-GE3 finds extensive use in various applications, including: - Switching power supplies - Motor control - LED lighting - Battery management systems - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the SI1469DH-T1-GE3 include: - SI2319DS-T1-GE3 - SI7850DP-T1-GE3 - SI7147DP-T1-GE3 - SI2308DS-T1-GE3

In conclusion, the SI1469DH-T1-GE3 MOSFET offers significant advantages in power management applications, despite having certain limitations. Its unique characteristics and functional features make it a valuable component in various electronic systems, contributing to efficient power control and amplification.

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