Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high voltage applications
Characteristics: High voltage capability, low on-resistance, fast switching speed
Package: TO-263
Essence: Power MOSFET for high voltage switching applications
Packaging/Quantity: Tape & Reel, 2500 units per reel
The IRFS11N50ATRR follows the standard pin configuration for a TO-263 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Advantages: - High voltage capability - Low on-resistance - Fast switching speed
Disadvantages: - Higher gate charge compared to some alternative models - Limited current rating compared to higher power devices
The IRFS11N50ATRR operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, it allows current to flow between the drain and source terminals, enabling efficient switching in high voltage applications.
The IRFS11N50ATRR is suitable for a wide range of applications including: - Power supplies - Motor control systems - High voltage inverters - Industrial automation equipment
Some alternative models to the IRFS11N50ATRR include: - IRFB4110PbF - STW11NK100Z
In conclusion, the IRFS11N50ATRR is a high voltage power MOSFET designed for efficient switching applications in various industries. With its low on-resistance, high voltage capability, and fast switching speed, it offers reliable performance in demanding environments.
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What is the maximum drain-source voltage of IRFS11N50ATRR?
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What is the on-state resistance (RDS(on)) of IRFS11N50ATRR?
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What are the typical applications for IRFS11N50ATRR?
What is the operating temperature range of IRFS11N50ATRR?
Is IRFS11N50ATRR suitable for high-frequency switching applications?
Does IRFS11N50ATRR require a heat sink for operation?
What is the gate charge of IRFS11N50ATRR?
Is IRFS11N50ATRR RoHS compliant?