IRFD9120PBF

Product Overview

Category: Transistor
Use: Switching applications
Characteristics: Small package, low power consumption
Package: TO-252
Essence: Power MOSFET
Packaging/Quantity: Tape & Reel, 2500 units

Specifications

• Voltage - Drain-Source Breakdown (Max): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.7A
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 2.7A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) @ Vgs: 5nC @ 10V
• Input Capacitance (Ciss) @ Vds: 300pF @ 25V
• Power Dissipation (Max): 1.25W

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low power consumption
• Fast switching speed
• High input impedance

Advantages and Disadvantages

Advantages: - Small package size - Low on-resistance - Suitable for low voltage applications

Disadvantages: - Limited maximum current handling capability - Sensitivity to static electricity

Working Principles

The IRFD9120PBF is a power MOSFET that operates based on the principle of field-effect. When a voltage is applied to the gate terminal, it creates an electric field which controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IRFD9120PBF is commonly used in low power switching applications such as LED lighting, battery management systems, and small motor control circuits. Its small package and low power consumption make it suitable for portable electronic devices and energy-efficient applications.

Detailed and Complete Alternative Models

1. IRF730PBF
2. IRF740PBF
3. IRF840PBF

In conclusion, the IRFD9120PBF is a power MOSFET transistor designed for low power switching applications. Its small package, low power consumption, and fast switching speed make it suitable for various electronic devices and energy-efficient systems.

[Word count: 298]